Questions: VGS has no effect on ID.
Select one:
True
False
Transcript text: VGS has no effect on ID.
Select one:
True
False
Solution
The answer is False.
Explanation:
VGS (Gate-Source Voltage) has a significant effect on ID (Drain Current) in a field-effect transistor (FET). In a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET), for example, the relationship between VGS and ID is crucial for the operation of the device. When VGS is below a certain threshold voltage (Vth), the MOSFET is in the cutoff region, and ID is essentially zero. As VGS increases above Vth, the MOSFET enters the linear (or ohmic) region and then the saturation region, where ID increases with VGS according to specific equations that describe the device's behavior.
In summary, VGS directly influences ID in a FET, making the statement "VGS has no effect on ID" false.