Questions: Problem 1 (25 pts)
USE ELEMENT BALANCES TO SOLVE. One of the most common commercial methods for the production of pure silicon that is to be used for the manufacture of semiconductors is the Siemens process of chemical vapor deposition (CVD). A chamber contains a heated silicon rod and a mixture of high-purity trichlorosilane mixed with high-purity hydrogen that is passed over the rod. Pure silicon (EGS-electronic grade silicon) deposits on the rod as a polycrystalline solid. (Single crystals of Si are later made by subsequently melting the EGS and drawing a single crystal from the melt.) The reaction is
H2(g) + SiHCl3(g) → Si(s) + 3 HCl(g)
The rod initially has a mass of 1460 g, and the mole fraction of H2 in the exit gas is 0.223. The mole fraction of H2 in the feed to the reactor is 0.580, and the feed enters at the rate of 6.22 kg mol / hr.
1a) Draw and label the system and streams. Clearly label your control volume.
1b) List and count all Unknowns.
1c) List and count all independent Equations. Clearly write out the element balance for each atomic species (Si, H, Cl).
1d) Determine the Degrees of Freedom (DOF).
1e) Solve for: what will be the mass of the rod at the end of 20 min?
Transcript text: Problem 1 (25 pts)
USE ELEMENT BALANCES TO SOLVE. One of the most common commercial methods for the production of pure silicon that is to be used for the manufacture of semiconductors is the Siemens process of chemical vapor deposition (CVD). A chamber contains a heated silicon rod and a mixture of high-purity trichlorosilane mixed with high-purity hydrogen that is passed over the rod. Pure silicon (EGS-electronic grade silicon) deposits on the rod as a polycrystalline solid. (Single crystals of Si are later made by subsequently melting the EGS and drawing a single crystal from the melt.) The reaction is
\[
\mathrm{H}_{2}(\mathrm{~g})+\mathrm{SiHCl}_{3}(\mathrm{~g}) \rightarrow \mathrm{Si}(\mathrm{~s})+3 \mathrm{HCl}(\mathrm{~g})
\]
The rod initially has a mass of 1460 g , and the mole fraction of $\mathrm{H}_{2}$ in the exit gas is 0.223 . The mole fraction of $\mathrm{H}_{2}$ in the feed to the reactor is 0.580 , and the feed enters at the rate of 6.22 kg $\mathrm{mol} / \mathrm{hr}$.
1a) Draw and label the system and streams. Clearly label your control volume.
1b) List and count all Unknowns.
1c) List and count all independent Equations. Clearly write out the element balance for each atomic species $(\mathrm{Si}, \mathrm{H}, \mathrm{Cl})$.
1d) Determine the Degrees of Freedom (DOF).
1e) Solve for: what will be the mass of the rod at the end of 20 min ?
Solution
Solution Steps
Step 1: Draw and label the system and streams
The system is the reactor containing the silicon rod. The inlet stream contains SiHCl3 and H2. The outlet stream contains HCl, SiHCl3, and H2. Si is deposited on the rod within the reactor.
The control volume encompasses the inside of the reactor. The image provided in the problem statement gives a visual representation.
Step 2: List and count all unknowns
Unknowns are the molar flow rates in the exit stream:
nHCl,out
nSiHCl3,out
nH2,out
nSi, deposited (effectively the rate of Si deposition)
Total unknowns: 4
Step 3: List and count all independent equations
We can write elemental balances for Si, H, and Cl. Additionally, we have information relating to the mole fractions of hydrogen, which gives a fourth equation.
Si balance: nSiHCl3,in = nSiHCl3,out + nSi,deposited
The first three parts of the provided chemical engineering problem have been solved as requested. The diagram, list of unknowns, and set of independent equations have been identified.